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Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability

by 1, 1, 1, 2 and 2,*
Korea Multi-purpose Accelerator Complex, Korea Atomic Energy Research Institute, Gyeongju 38180, Korea
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
Author to whom correspondence should be addressed.
Electronics 2020, 9(9), 1402;
Received: 3 August 2020 / Revised: 28 August 2020 / Accepted: 28 August 2020 / Published: 30 August 2020
(This article belongs to the Section Semiconductor Devices)
A gallium nitride (GaN)-based normally off metal–oxide–semiconductor field-effect transistor (MOSFET) using a dual-metal-gate (DMG) structure was proposed and fabricated to improve current drivability. Normally off operation with a high Vth of 2.3 V was obtained using a Cl2/BCl3-based recess etching process. The DMG structure was employed to improve current characteristics, which can be degraded by recess etching. The ID and gm of a DMG-based device with nickel (Ni)-aluminum (Al) were improved by 42.1% and 30.9%, respectively, in comparison to the performances of a single-metal-gate-based device with Ni because the DMG structure increased electron velocity in the channel region. This demonstrates that the DMG structure with a large work-function difference significantly improves the carrier transport efficiency. GaN-based recessed-gate MOSFETs based on the DMG structure hold promising potentials for high-efficiency power devices. View Full-Text
Keywords: GaN; recessed-gate; normally-off; dual-metal-gate structure GaN; recessed-gate; normally-off; dual-metal-gate structure
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Yoon, Y.J.; Lee, J.S.; Kim, D.-S.; Lee, J.-H.; Kang, I.M. Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability. Electronics 2020, 9, 1402.

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